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 tm FFH15S60S 15 A, 600 V, STEALTH? II Diode ?2007 Fairchild Semiconductor Corporation FFH15S60S Rev. A www.fairchildsemi.com 1 FFH15S60S Features ? Stealth Recovery, Trr = 35 ns (@ I F = 15 A) ? Max Forward Voltage, VF = 2.6 V (@ T C = 25°C) ? 600V Reverse Voltage and High Reliability Applications ? General Purpose ? Switching Mode Power Supply ? Boost Diode in Continuous Mode Power Factor ? Power Switching Circuits 15 A, 600 V, STEALTH? II Diode The FFH15S60S is a STEALTH? II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Absolute Maximum Ratings TC = 25oC unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Unit VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current @ TC = 120 oC 15 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 150 A TJ, TSTG Operating and Storage Temperature Range -65 to +150 oC Symbol Parameter Ratings Unit RθJC Maximum Thermal Resistance, Junction to Case 1.4 oC/W Device Marking Device Package Reel Size Tape Width Quantity F15S60S FFH15S60STU TO-247-2L - - 50 1. Cathode 2. Anode 1. Cathode 2. Anode TO-247-2L September 200 7 ? Avalanche Energy Rated ? RoHS compliant |